论文标题
反铁磁半导体CRSB中的表面电导率$ _2 $
Surface Conductivity in Antiferromagnetic Semiconductor CrSb$_2$
论文作者
论文摘要
散装和表面对沿晶体学\ textit {b} - 和\ textit {c}轴的贡献作为晶体厚度的函数的贡献，可以证明在反铁磁性狭窄的narrow gap半导体crsb $ _ {2} $中的温度独立表面状态。 Arpes在$γ$ - $ z $方向上显示了一个透明的电子袋，该口袋在散装带结构中不存在。第一原理的计算还证实了整体间隙内的金属表面状态。相结合的实验探针指向与拓扑绝缘体相似的表面传导的增强，而表面状态是微不足道的，因为CRSB $ _2 $没有表现出频段倒置。
The contribution of bulk and surface to the electrical resistance along crystallographic \textit{b}- and \textit{c}-axes as a function of crystal thickness gives evidence for a temperature independent surface states in an antiferromagnetic narrow-gap semiconductor CrSb$_{2}$. ARPES shows a clear electron-like pocket at $Γ$-$Z$ direction which is absent in the bulk band structure. First-principles calculations also confirm the existence of metallic surface states inside the bulk gap. Whereas combined experimental probes point to enhanced surface conduction similar to topological insulators, surface states are trivial since CrSb$_2$ exhibits no band inversion.
