论文标题
Moiré及以后的过渡金属二甲基化型扭曲的双层
Moiré and beyond in transition metal dichalcogenide twisted bilayers
论文作者
论文摘要
通过堆叠相同或不同的二维（2D）层来制造范德华（VDW）双层异质结构（BL-HS），提供具有丰富的电子和光学特性的独特物理系统。组件层之间的扭曲角度已成为一个非凡的参数，可以控制侧面限制周期，并且在倒数空间中的激子（库仑结合的电子对）的性质（库仑结合的电子对）的性质，从而产生了包括moiréexcitons在内的外来物理状态。在这篇评论文章中，我们关注过渡金属二甲基（TMD）半导体扭曲BL-HS中激子的光电特性。我们查看局部和密切相关状态中Moiré激子的现有证据，以及MoiréSuprattice和lattice-Rectruction的纳米级映射。这篇综述将有助于指导社区，并激发近场光学测量和控制新型物理状态等领域的工作。
Fabricating van der Waals (vdW) bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional (2D) layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moiré excitons. In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide (TMD) semiconductor twisted BL-HS. We look at existing evidence of moiré excitons in localized and strongly correlated states, and at nanoscale mapping of moiré superlattice and lattice-reconstruction. This review will be helpful in guiding the community as well as motivating work in areas such as near-field optical measurements and controlling the creation of novel physical states.
