论文标题
使用火焰沉积的Moo3对石墨烯的超高掺杂3
Ultrahigh Doping of Graphene Using Flame-Deposited MoO3
论文作者
论文摘要
基于石墨烯的电子产品的预期高性能通常由于缺乏足够的掺杂而阻碍，这会导致低载体密度和较大的板电阻。许多报道的石墨烯掺杂方案也遭受了与现有半导体加工的不稳定性或不兼容。在这里，我们报告了通过化学蒸气沉积生长的单层石墨烯的超高和稳定的P型掺杂量高达〜7x10^1/cm^2（〜2x10^21 1/cm^3}）。这是通过使用快速火焰合成技术在石墨烯上直接多晶Moo3生长来实现的。通过这种方法，孔的金属石膏接触电阻降低至200欧姆-UM。我们还证明，与电子束沉积的MOO3相比，火焰沉积的MOO3可提供超过5倍的石墨烯掺杂，以及高的热和长期稳定性。
The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semiconductor processing. Here we report ultrahigh and stable p-type doping up to ~7x10^13 1/cm^2 (~2x10^21 1/cm^3}) of monolayer graphene grown by chemical vapor deposition. This is achieved by direct polycrystalline MoO3 growth on graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for holes is reduced to ~200 Ohm-um. We also demonstrate that flame-deposited MoO3 provides over 5x higher doping of graphene, as well as superior thermal and long-term stability, compared to electron-beam deposited MoO3.
