论文标题
微波交流电压诱导的阶段变化sb $ _2 $ te $ _3 $纳米线
Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires
论文作者
论文摘要
将信息位扩展到较小的维度是信息技术的主要驱动力（IT）。纳米结构的相变材料是当前绿色努力的关键参与者，其功率消耗低，功能模块化和有前途的可扩展性。在这项工作中，我们介绍了微波交流电压诱导的相变现象的演示，单个SB $ _2 $ _3 $ _3 $纳米线。从晶体金属到无定形半导体阶段的过渡可以证明电阻变化总数6-7个数量级，该阶段通过温度依赖的转运测量和高分辨率电子显微镜分析来盘问。这一发现可能会沿单个纳米线，呈现神经启发的计算设备的技术进步来量身定制多状态信息的位编码和歧视。
Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.
