论文标题
BI和Fe Codoped Batio3
Engineering room-temperature multiferroicity in Bi and Fe codoped BaTiO3
论文作者
论文摘要
Fe掺杂到Batio3，稳定了副六边形相，以代替铁电四方[P. Pal等。物理。 Rev. B，101，064409（2020）]。我们表明，通过仔细调整FE VANENCE的仔细调整以及铁电甲状化相位的可控重点，在室温下同时将BI与FE一起掺入BATIO3可以有效地增强磁电（ME）多效反应（既包括铁磁性和铁电性）。我们还报告了较大的介电恒定值的系统性增加以及损失切线值的降低，而室温周围介电恒定的温度相对中等，而BA1-XBIXTI0.9FE0.1O3（0 <x <0.1）中的BI掺杂含量增加，这使得较高的bi-fe copeped samper promepter（x = 0.08）的材料（0 <x <0.1），以确保较高的permecter（x = 0.08）。有趣的是，发现x = 0.08（Bi-fe codoped）样品不仅被发现比x = 0（仅在室温下）强的（〜6次）强（〜6次）在室温下强，而且还观察到可以更好地隔离我的范围较大的仪器，从而可以更好地绝缘（较大的带量），并逐渐启用了较大的范围。因此，室温ME多性性是在BI和Fe Codoped BTO（Batio3）化合物中设计的。
Fe doping into BaTiO3, stabilizes the paraelectric hexagonal phase in place of the ferroelectric tetragonal one [P. Pal et al. Phys. Rev. B, 101, 064409 (2020)]. We show that simultaneous doping of Bi along with Fe into BaTiO3 effectively enhances the magnetoelectric (ME) multiferroic response (both ferromagnetism and ferroelectricity) at room-temperature, through careful tuning of Fe valency along with the controlled-recovery of ferroelectric-tetragonal phase. We also report systematic increase in large dielectric constant values as well as reduction in loss tangent values with relatively moderate temperature variation of dielectric constant around room-temperature with increasing Bi doping content in Ba1-xBixTi0.9Fe0.1O3 (0<x<0.1), which makes the higher Bi-Fe codoped sample (x=0.08) promising for the use as room-temperature high-k dielectric material. Interestingly, x=0.08 (Bi-Fe codoped) sample is not only found to be ferroelectrically (~20 times) and ferromagnetically (~6 times) stronger than x=0 (only Fe-doped) at room temperature, but also observed to be better insulating (larger bandgap) with indirect signatures of larger ME coupling as indicated from anomalous reduction of magnetic coercive field with decreasing temperature. Thus, room-temperature ME multiferroicity has been engineered in Bi and Fe codoped BTO (BaTiO3) compounds.
