学术文献库

High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in In\textsubscript{0.52}Al\textsubscript{0.48}As with the three valley model using the semi-classical ensemble Monte Carlo method and including all important scattering mechanisms. All electronic transport parameters such drift velocity, valley occupation, average electron energy, ionization coefficient and generation rate, electron effective mass, diffusion coefficient, energy and momentum relaxation time are extracted rigorously from the simulations. Using these, we present a complete characterization of the transient electronic transport showing the variation of drift velocity with distance and time. We have then estimated the optimal cut-off frequencies for various device lengths via the velocity overshoot effect. Our analysis shows that for device lengths shorter than $700$ nm, transient effects are significant and should be taken into account for optimal device designs. As a critical example, at length scales of around $100$ nm, we obtain a significant improvement in the cut-off frequency from $261$ GHz to $663$ GHz with the inclusion of transient effects. The field dependence of all extracted parameters here can prove to be helpful for further device analysis and design.