论文标题
大厅效应和\ b {eta} -GA2O3单晶的范围温度依赖性（80-630 K）研究
Wide range temperature-dependent (80-630 K) study of Hall effect and the Seebeck coefficient of \b{eta}-Ga2O3 single crystals
论文作者
论文摘要
对超宽带隙材料中Seebeck系数的研究提出了测量的挑战，但是，对于理解电气和热传导涉及的基本运输机制至关重要。 \ b {eta} -ga2O3是用于高功率光电应用的战略材料。目前的工作报告在较宽的温度范围内（80-630 K），单晶SN掺杂\ b {eta} -GA2O3的SEEBECK系数测量。在整个温度范围内具有较大幅度和负标志的非单调趋势表明电子是主要的载体。结构和拉曼的表征分别证实了低，中和高频声子模式的单相和存在。作为补充研究，进行了依赖温度的（90-350 K）HALL效应测量。 HALL的迁移率显示T1.12的T小于135 K和T-0.70的T1.12对于T超过220K。Seebeck系数和电导率分析的激活能显示出由于杂质缺陷而存在间带传导。室温Seebeck系数，功率因数和导热系数分别为68.57 microv/k，0.15 microW/k2cm和14.2 w/mk。发现\ b {eta} -ga2o3的含量值为aprox。 0.01（300 K）。
Investigation of Seebeck coefficient in ultra-wide bandgap materials presents a challenge in measurement, nevertheless, it is essential for understanding fundamental transport mechanisms involved in electrical and thermal conduction. \b{eta}-Ga2O3 is a strategic material for high power optoelectronic applications. Present work reports Seebeck coefficient measurement for single crystal Sn doped \b{eta}-Ga2O3 in a wide temperature range (80-630 K). The non-monotonic trend with large magnitude and negative sign in the entire temperature range shows electrons are dominant carriers. The structural and Raman characterization confirms the single-phase and presence of low, mid, and high-frequency phonon modes, respectively. Temperature dependent (90-350 K) Hall effect measurement was carried out as supplementary study. Hall mobility showed T1.12 for T less than 135 K and T-0.70 for T more than 220 K. Activation energies from Seebeck coefficient and conductivity analysis revealed presence of inter band conduction due to impurity defects. The room temperature Seebeck coefficient, power factor and thermal conductivity were found as 68.57 microV/K, 0.15 microW/K2cm and 14.2 W/mK, respectively. The value of the figure-of-merit for \b{eta}-Ga2O3 was found to be aprox. 0.01 (300 K).
