论文标题
基于紧张的HGTE膜的高慢速3D拓扑绝缘子的Terahertz光晶
Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
论文作者
论文摘要
我们报告了所有费米级位置的紧张的HGTE HGTE三维拓扑绝缘子（3D TI）中Terahertz（THz）光持稳定性的详细研究：在传导和价带内以及大体间隙中。在存在磁场的情况下，我们检测到对应于顶部表面狄拉克费米（DF）中的转基因共振（CR）的共振，并检查表面状态转基因质量在费米水平位置上的非平地依赖性。我们还检测到中等电子密度的其他共振特征，并证明它们是由表面DF和散装电子的混合引起的。在高电子密度下，我们观察到Thz辐射诱导的1/B周期性低场磁磁振荡与CR的谐波结合，并证明它们具有以前在高移动性GAAS GAAS基于高的基于GAAS基于GAAS的抗性振荡（MIRO）的共同起源。该观察结果证明了由螺旋表面状态在紧张的HGTE膜中形成的2D电子系统的优异质量。
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DF and bulk electrons. At high electron densities, we observe THz radiation induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations (MIRO) previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of 2D electron system formed by helical surface states in strained HgTe films.
