论文标题
A-sinx中离子轨道形态的进化：h通过动态电子能量损失
Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss
论文作者
论文摘要
非晶态氢化硅氮化硅（$ \ textit {a} $ - sin $ _ \ mathrm {\ textit {x}} $：h）薄膜薄膜，用100 mev ni $^{7+} $ primed $ 5 \ \ 5 \ \ 5 \ \ 5 \ \ y vermaties $ 5 \ \ 5 \ \ fluestions ryadif fime离子/cm $^2 $，而在$ 1 \ times {10^{14}} $ ions/cm $^2 $的较高流动性下，轨道结构片段片段片段片段中的不连续离子轨道如结构。观察不连续的离子轨道，就像$ 1 \ times {10^{14}} $ ions/cm $^2 $的高速脉冲上的结构清楚地表明，较高的通量照射可能并不总是导致在较低通风率下形成的微观结构的溶解。根据动态电子能量损失（s $ _ {e} $）的理解，在辐照过程中是由于电影中氢的过度和$ \ textit {a} $ - sin} $ - sin $ _ \ sin $ _ \ mathrm {\ textit {\ textit {x textit {x {x} $：
Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$ ions/cm$^2$ whereas at higher fluence of $1\times{10^{14}}$ ions/cm$^2$ the track structures fragment into discontinuous ion track like structures . The observation of the discontinuous ion track like structures at the high fluence of $1\times{10^{14}}$ ions/cm$^2$ shows clearly that higher fluence irradiation may not always lead to dissolution of the microstructure formed at lower fluence. The results are understood on the basis of a dynamic electronic energy loss (S$_{e}$) in the course of irradiation resulting from the out-diffusion of hydrogen from the films and a continuous increase in density of $\textit{a}$-SiN$_\mathrm{\textit{x}}$:H films.
