论文标题
快速热退火，以优化ZnO底物的MBE生长氧化物二维电子气体的ZnO底物
Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases
论文作者
论文摘要
ZnO/ZnMGO界面处的二维电子气体（2DEGS）有望在旋转和量子计算中应用，这是由于低自旋轨道耦合和高电子迁移率的组合。越来越高的迁移率2高，需要高质量杂质密度的高质量底物。在这项工作中，我们证明了ZnO底物样品处理，结合了高温快速热退火和化学蚀刻，以改善2级生长的表面质量。此过程使2DEG的低温移动性的增长为$ 4.8 \ times10^4 $ 〜cm $^2 $ v $ v $^{ - 1} $ s $ s $^{ - 1} $。未经通道的对照样品显示散射率至少是退火样品的三倍。
Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of $4.8\times10^4$~cm$^2$V$^{-1}$s$^{-1}$. An unannealed control sample shows a scattering rate at least three times greater than the annealed sample.
