论文标题
电场低接通场的Algan纳米线的现场排放
Field emission from AlGaN nanowires with low turn-on field
论文作者
论文摘要
我们通过分子束外延制造α纳米线，并通过使用纳米操纵的钨尖作为电极作为电极，在扫描电子显微镜内部研究它们的场发射特性。尖端形阳极可访问本地属性，并允许收集从小至1美元^2 $的区域发出的电子。在Fowler-Nordheim理论的框架中分析了场发射特性，我们发现一个场增强因子高达$β$ = 556和最小的转交范围$ e_ {turn-On} $ = 17 v/$μ$ m，用于阴极 - 磁极分离距离d = 500 nm。我们表明，为了增加分离距离，$ e_ {turn-on} $增加到约35 v/$μ$ m，$β$在d = 1600 nm时降至100。我们还证明了几分钟的艾尔根纳米线的场发射电流的时间稳定性。最后，我们解释了由于存在突出的发射器而导致的非均匀场增强因子，对低场的Fowler-Nordheim图的修饰斜率观察到了。
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are analyzed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as $β$ = 556 and a minimum turn-on field $E_{turn-on}$ = 17 V/$μ$m for a cathode-anode separation distance d = 500 nm. We show that for increasing separation distance, $E_{turn-on}$ increases up to about 35 V/$μ$m and $β$ decreases to 100 at d = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters.
