论文标题
山谷选择性的能量转移在原子较薄的半导体中的量子点之间
Valley-selective energy transfer between quantum dots in atomically thin semiconductors
论文作者
论文摘要
在过渡金属二分法的单层中，有效介电筛选的非局部性质导致激子的结合能大。额外的横向限制会引起量子点中的激子定位。通过假设对电子和孔的抛物线限制，我们得出了电子孔对的相对和质量中心运动的模型波函数，并研究了在两个相邻量子点中定位的激子之间的理论上共振能量转移。我们通过假设两个量子点之间的相互作用由库仑电势描述，这使我们能够在相互作用中包括所有相关的多极项，从而量化了直接间隙转变的能量传递概率。我们证明了量子点之间的山谷选择性能量转移的结构控制。
In monolayers of transition metal dichalcogenides the nonlocal nature of the effective dielectric screening leads to large binding energies of excitons. Additional lateral confinement gives rise to exciton localization in quantum dots. By assuming parabolic confinement for both the electron and the hole, we derive model wave functions for the relative and the center-of-mass motions of electron-hole pairs, and investigate theoretically resonant energy transfer among excitons localized in two neighboring quantum dots. We quantify the probability of energy transfer for a direct-gap transition by assuming that the interaction between two quantum dots is described by a Coulomb potential, which allows us to include all relevant multipole terms of the interaction. We demonstrate the structural control of the valley-selective energy transfer between quantum dots.
