论文标题
拓扑绝缘子中的固有自旋效果:第一原理研究
Intrinsic spin Hall effect in topological insulators: A first-principles study
论文作者
论文摘要
典型拓扑绝缘子SB $ _2 $ SE $ _3 $,SB $ _2 $ _2 $ _3 $,BI $ _2 $ _2 $ SE $ _3 $和BI $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2 $ _2结果表明,在费米能源附近,有限的自旋电导率为100--200($ \ hbar $/2e)(s/cm)。尽管所得的值比重金属小的数量级,但由于它们相对较低的纵向电导率,它们显示出可比的旋转角度。然后将不同化合物的旋转角度与拓扑结构器/铁磁性异质结构的最新实验进行了比较。该比较表明,大量在产生自旋电流和因此在磁化开关应用中的自旋扭矩的作用与表面的作用相当,包括旋转摩托杆锁定的表面状态和界面处的Rashba-Edelstein效应。
The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear response theory in a maximally localized Wannier basis. The results show that there is a finite spin Hall conductivity of 100--200 ($\hbar$/2e)(S/cm) in the vicinity of the Fermi energy. Although the resulting values are an order of magnitude smaller than that of heavy metals, they show a comparable spin Hall angle due to their relatively lower longitudinal conductivity. The spin Hall angle for different compounds are then compared to that of recent experiments on topological-insulator/ferromagnet heterostructures. The comparison suggests that the role of the bulk in generating a spin current and consequently a spin torque in magnetization switching applications is comparable to that of the surface including the spin-momentum locked surface states and the Rashba-Edelstein effect at the interface.