论文标题
$γ$ -VALLEY过渡金属甲基甲基元素Moirè带
$Γ$-Valley Transition-Metal-Dichalcogenide Moirè Bands
论文作者
论文摘要
大多数VI Group-VI过渡金属二甲化合物薄膜的价最大值保持在$γ$ - 从散装到双层。在本文中，我们开发了一种连续理论的Moirè迷你吧，该理论是在$γ$ -VALLEY同性恋者的价带中形成的。我们的有效理论是针对解释晶格松弛的大规模的电子结构计算的基准测试的。由于出现的$ d_6 $对称性，我们发现低能量$γ$ -ValleyMoirè孔与以前所述的K-Valley对应物有质量不同。在能量顺序中，前三个频段意识到i）在蜂窝晶格上的单轨模型，ii）蜂窝晶格上的两轨模型，以及iii）在kagome晶格上的单轨模型。
The valence band maxima of most group-VI transition metal dichalcogenide thin films remain at the $Γ$-point all the way from bulk to bilayer. In this paper we develop a continuum theory of the moirè minibands that are formed in the valence bands of $Γ$-valley homobilayers by a small relative twist. Our effective theory is benchmarked against large-scale ab initio electronic structure calculations that account for lattice relaxation. As a consequence of an emergent $D_6$ symmetry we find that low-energy $Γ$-valley moirè holes differ qualitatively from their K-valley counterparts addressed previously; in energetic order the first three bands realize i) a single-orbital model on a honeycomb lattice, ii) a two-orbital model on a honeycomb lattice, and iii) a single-orbital model on a kagome lattice.
