论文标题
掺杂薄膜有机半导体岛中的电荷载体反演
Charge carrier inversion in a doped thin film organic semiconductor island
论文作者
论文摘要
在有机半导体中诱导反转层是产生有机场效应晶体管（OFET）设备的高度平息但至关重要的成就，该设备依赖于以成功操作的反转，积累和耗尽方案的产生。近年来，达到了一个主要的里程碑：AN OFET首次成功地在反转模式中运作。在这里，我们开发了一种脉冲偏置技术来表征任何有机材料系统的掺杂剂类型，而无需对所讨论的材料进行事先了解或表征。我们在五苯/PTCDI异质结构上使用此技术，从而推断五苯二苯乙烯是由杂质掺杂的。此外，通过尖端引起的带弯曲，我们在20〜nm半径上产生反转，耗竭和累积状态，这是三个单层厚的N掺杂的五苯甲烷岛。我们的发现表明，纳米尺度的横向范围和厚度足以使OFET设备在反转状态下运行。
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is n-doped by impurities. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20~nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.
