论文标题
inas/in $ _ {x} $ ga $ _ {1-x} $ sb复合量子量井中的能源差距调整和栅极控制的拓扑相过渡
Energy gap tuning and gate-controlled topological phase transition in InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells
论文作者
论文摘要
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field.对于$ x = 0.4 $的高度紧张的CQW，我们获得了35 meV的间隙，比二进制INAS/GASB CQWS报告的数量级要大。使用双门配置，我们展示了电场驱动的拓扑相变，该拓扑相变为能量隙的重点行为。在单个设备的拓扑和正常阶段中获得的较大能量差距和高体积电阻率开放了边缘传输电气开关的可能性。
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivity obtained in both the topological and normal phases of a single device open the possibility of electrical switching of the edge transport.
