论文标题
具有自对准第二门层的硅量子点设备
Silicon quantum dot devices with a self-aligned second gate layer
论文作者
论文摘要
我们使用自定位技术实现了具有两层栅极电极的硅量子点设备，该技术允许超小的栅极长度和本质上完美的层对层对准。在双量子点系统中，我们研究了孔的传输并观察由于保利自旋封锁而引起的电流整流。磁场测量表明，孔自旋松弛由自旋轨道相互作用支配，并使我们能够确定有效的孔$ g $ -factor $ \ simeq1.6 $。从避免出现在高磁场上的单线杂交交叉，获得了自旋轨道耦合强度$ \ simeq0.27 $ MEV，有希望的快速且全电动的自旋控制。
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control.
