论文标题
铁电性的分析模型促进了短通道芬费的增强静电控制
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
论文作者
论文摘要
这项研究模拟了使用TCAD的频道长度从25nm到100nm的负极电气双门鳍片。结果表明，负电容可显着减少亚阈值的挥杆以及排水引起的屏障降低效应。发现该改进对于短通道设备而言，该改进比长通道设备明显更为突出，这证明了缩放MOSFET的负电容栅堆堆栈的巨大优势。开发了紧凑的分析公式，以量化短通道设备的子阈值改善。
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.
