论文标题
光学上可调的光致发光和芯片上的上转换激光
Optically tunable photoluminescence and upconversion lasing on a chip
论文作者
论文摘要
在硅芯片上调整光发射波长的能力对于可扩展的光子网络，分布式光子传感器网络和下一代计算机架构很重要。在这里，我们证明了芯片尺度的光力学设备的光发射，其宽度范围是辐射压力和光热效应的组合提供的。为了实现这一目标，我们通过植入ERBIUM离子开发了光学活跃的双盘光力系统。我们观察到电信带中光致发光的频率调整，波长范围为520 pm，绿色上转换激光，阈值$ 340 \ pm 70 \; μ$ W，以及由辐射压力和热效应的相互作用引起的光学机械自动脉冲。这些结果为光子网络提供了广泛可调的微米尺度激光的路径。
The ability to tune the wavelength of light emission on a silicon chip is important for scalable photonic networks, distributed photonic sensor networks and next generation computer architectures. Here we demonstrate light emission in a chip-scale optomechanical device, with wide tunablity provided by a combination of radiation pressure and photothermal effects. To achieve this, we develop an optically active double-disk optomechanical system through implantation of erbium ions. We observe frequency tuning of photoluminescence in the telecommunications band with a wavelength range of 520 pm, green upconversion lasing with a threshold of $340\pm 70 \; μ$W, and optomechanical self-pulsing caused by the interplay of radiation pressure and thermal effects. These results provide a path towards widely-tunable micron-scale lasers for photonic networks.
