论文标题
远场辐射热矫正用散装材料
Far-Field Radiative Thermal Rectification with Bulk Materials
论文作者
论文摘要
在本文中，我们使用从文献中提取的辐射和热辐射特性探索了常见材料，例如金属，介电和掺杂的半导体的远场辐射热整流电位。考虑了十种不同的材料。然后计算出44对材料的矫正系数；每对可用于辐射热二极管的两个端子。考虑了200 K的热偏差。材料和热偏置值的选择仅受文献中的数据可用性的约束。获得的结果，突出了用于远场辐射热整流的新候选材料。它们还强调了热整流不容易忽略的材料，在考虑存在类似的热偏置的系统并使用这些材料时，应在传热计算中谨慎考虑。在所研究的材料中，未扎的砷化胺（INAS）表现出非常有前途的热矫正，其热矫正比与其他材料结合使用了90.5％。获得的结果为热辐射控制和管理设备（例如热二极管）的优化设计铺平了道路。
In this paper, we explore the far-field radiative thermal rectification potential of common materials such as metals, dielectrics and doped semi-conductors using radiative and thermo-radiative properties extracted from literature. Ten different materials are considered. The rectification coefficient is then calculated for 44 pairs of materials; each pair can be used for the two terminals of a radiative thermal diode. A thermal bias of 200 K is considered. The choice of materials and thermal bias value is only bound by data availability in literature. Obtained results, highlight new candidate materials for far-field radiative thermal rectification. They also highlight materials where thermal rectification is not negligible and should be considered with care in heat transfer calculations when considering systems subject to a comparable thermal bias and where these materials are used. Among the materials studied, undoped Indium Arsenide (InAs) shows great promise to be employed for thermal rectification, with a thermal rectification ratio reaching 90.5% in combination with other materials. Obtained results pave the way for an optimized design of thermal radiation control and management devices such as thermal diodes.
