论文标题
状态分析的静电限制的密度
Density of States Analysis of Electrostatic Confinement in Gapped Graphene
论文作者
论文摘要
我们研究了在存在磁通量的情况下，在大幅度的石墨烯量子点中，电荷载体的静电限制。圆形量子点是由无限石墨烯片中界定静脉电势定义的，然后将其连接到两个末端设置。考虑到组成我们系统的不同区域，我们明确确定了汉克尔功能方面的能量谱的解决方案。我们将散射矩阵与汉克尔函数的渐近行为一起用于大参数，我们计算状态的密度，并表明它具有振荡行为，并出现谐振峰的出现。发现能隙可以控制这些共振的幅度和宽度，并影响它们在状态剖面密度中的位置。
We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene sheet which is then connected to a two terminal setup. Considering different regions composing our system, we explicitly determine the solutions of the energy spectrum in terms of Hankel functions. Using the scattering matrix together with the asymptotic behavior of the Hankel functions for large arguments, we calculate the density of states and show that it has an oscillatory behavior with the appearance of resonant peaks. It is found that the energy gap can controls the amplitude and width of these resonances and affect their location in the density of states profile.
