论文标题
在室温下用于辐射仪应用的单个光子源的表征
Characterization of single photon sources for radiometry applications at room temperature
论文作者
论文摘要
具有高可重复性和低不确定性的单个光子源是基于光子数量的几个光子计量学的关键元素。虽然低光子数量波动和高可重复性是资格作为标准光源的重要数字，但这些特征在单个光子发射器中受到某些恶意现象的限制，例如闪烁或内部放松在不同材料中的不同程度。这项研究旨在表征室温下辐射仪应用的光子数量波动和重复性。对于这项研究中的一般性，我们在低兴奋能力和三个材料平台的低兴奋能力和室温下收集了各种单个光子发射器的$ g^{（2）}（2）}（0）<1 $：钻石中的硅空缺，GAN中的缺陷，HBN的空位。我们发现与间接影响光子数稳定性的内部状态的松弛时间相关的常见因素。与HBN相比，由于更快的松弛速度，我们观察到了光子数的高稳定性，而HBN的空缺速度更快，而HBN的空缺则是每秒产生的高率（$> 10^6 $）的光子。最后，我们证明了明亮的HBN单光子发射极的可重复的辐射通量测量值，从几十个formtowatt到一个picowatt，宽辐射通量范围很大。
A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varying degrees in different materials. This study seeks to characterize photon number fluctuations and repeatability for radiometry applications at room temperature. For generality in this study, we collected photon statistics data with various single photon emitters of $g^{(2)}(0) < 1$ at low excitation power and room temperature in three material platforms: silicon vacancy in diamond, defects in GaN, and vacancy in hBN. We found common factors related with the relaxation times of the internal states that indirectly affect photon number stability. We observed a high stability of photon number with defects in GaN due to faster relaxations compared with vacancies in hBN, which on the other hand produced high rates ($> 10^6$) of photons per second. Finally, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
