论文标题
超薄srruo $ _3 $胶片中异常大厅效应和驼峰结构的封盖和门控制
Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO$_3$ films
论文作者
论文摘要
srruo $ _3 $（SRO）中的铁磁性和外来拓扑结构诱导签名改变异常霍尔效应（AHE）。最近，在SRO薄膜的大厅电阻率中报道了驼峰结构，尤其是在超薄政权中。我们研究了SRTIO $ _3 $（STO）上限层和离子液体门控的SRO Ultra-Phin-thin膜的AHE和驼峰结构。 STO封封导致驼峰结构的AHE和调制的符号变化。特别是，大厅电阻率中的驼峰结构受到强烈调节，甚至在Sto封闭的4个单元（UC）膜中消失。此外，通过恢复的铁磁性，STO覆盖的SRO超薄膜的电导率大大提高。我们还进行了离子液体门控以调节SRO/STO界面的电场。观察到不同的栅极电压观察到AHE和驼峰结构的急剧变化。我们的研究表明，驼峰结构以及AHE可以通过调谐反转对称性和界面处的电场来控制。
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) capping layer and ionic liquid gating. STO capping results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell (uc) films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface.
