论文标题
通过表面掺杂制备热电材料的理想P-N结界界面的合理方法
A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
论文作者
论文摘要
二维（2D）晶体的最新进展使实现设备应用所需的理想接口结构成为可能。具体而言，预计由2D晶体制成的P-N结可以表现出定义明确的界面，从而导致高设备性能。使用角度分辨光发射光谱，显示了简单的表面处理，以使可能形成这种界面。由于电荷从TA到SNSE的转移，由于SNSE的分层结构，TA吸附在P掺杂SNSE表面将价带的最大值移向了更高的结合能，该电荷从TA到SNSE高度位于表面。结果，表面的电荷载体从其大体特性的孔更改为电子，而大体则是P型半导体。该观察结果表明，P-N结的定义明确的界面与原子较薄{\ it n} - 区域形成在Ta-Addingsed表面和散装之间。
Recent advances in two-dimensional (2D) crystals make it possible to realize an ideal interface structure that is required for device applications. Specifically, a p-n junction made of 2D crystals is predicted to exhibit an atomically well-defined interface that will lead to high device performance. Using angle-resolved photoemission spectroscopy, a simple surface treatment was shown to allow the possible formation of such an interface. Ta adsorption on the surface of a p-doped SnSe shifts the valence band maximum towards higher binding energy due to the charge transfer from Ta to SnSe that is highly localized at the surface due to the layered structure of SnSe. As a result, the charge carriers of the surface are changed from holes of its bulk characteristics to electrons, while the bulk remains as a p-type semiconductor. This observation suggests that the well-defined interface of a p-n junction with an atomically thin {\it n}-region is formed between Ta-adsorbed surface and bulk.
