论文标题
SNSE（1-X）SX分层半导体合金的光学声子
Optical phonons of SnSe(1-x)Sx layered semiconductor alloys
论文作者
论文摘要
通过使用六个不同的激发波长（784.8、632.8、532、514.5、488、488和441.6 nm），研究了分层半导体合金中光音子SNSE1-XSX的演变。将声子模式的极化依赖性与透射电子衍射测量进行比较，以确定样品的晶体学取向。一些拉曼模式根据激发波长显示其极化行为的显着差异。可以确定的是，snSe1-xsx的AG2模式的最大强度方向（0 <= x <= 1）不取决于激发波长，并且对应于扶手椅方向。还发现，合金中Ag1，Ag2和B3G1的低频拉曼模式显示了光子声子的典型一模式行为，而B3G2，AG3和AG4的高频模式显示了两种模式行为。
The evolution of the optical phonons in layered semiconductor alloys SnSe1-xSx is studied as a function of the composition by using polarized Raman spectroscopy with six different excitation wavelengths (784.8, 632.8, 532, 514.5, 488, and 441.6 nm). The polarization dependences of the phonon modes are compared with transmission electron diffraction measurements to determine the crystallographic orientation of the samples. Some of the Raman modes show significant variation in their polarization behavior depending on the excitation wavelengths. It is established that the maximum intensity direction of the Ag2 mode of SnSe1-xSx (0<=x<=1) does not depend on the excitation wavelength and corresponds to the armchair direction. It is additionally found that the lower-frequency Raman modes of Ag1, Ag2 and B3g1 in the alloys show the typical one-mode behavior of optical phonons, whereas the higher-frequency modes of B3g2, Ag3 and Ag4 show two-mode behavior.
