论文标题
打破原子突触的量子PIN代码
Breaking the quantum PIN code of atomic synapses
论文作者
论文摘要
原子突触代表了一类特殊的回忆录，其操作依赖于在绝缘子上桥接两个电极的金属纳米丝的形成。由于该最狭窄的横截面对设备电导的放大作用，因此一些原子的纳米尺度位移可以最终以低能成本允许对各种电阻状态的访问，从而满足了神经形态计算硬件的基本要求。然而，设备工程缺乏这种丝状电导的完整量子表征。在这里，我们分析了使用超导电极时在细丝末端出现的多个Andreev反射过程。因此，揭示了量子引脚代码，即每个导致纳米插座电导率的每个单个传导通道的传输概率。我们对NB $ _2 $ o $ _5 $电阻开关连接的测量值提供了深刻的实验证据，即通过形成真正原子尺寸的金属丝，表现出高电导状态的发作。
Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the device conductance, a nanometer scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. Yet, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby the quantum PIN code, i.e. the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions is revealed. Our measurements on Nb$_2$O$_5$ resistive switching junctions provide a profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.
