论文标题
极化中的旋转传输引起的楔形\ textit {c} nanowalls中载体的二维限制
Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls
论文作者
论文摘要
极化诱导的二维电子气通道在理论上研究了楔形\ textit {C} {C}的面向面向的gan nanowall的二维电子气通道。由于限制电势可以保留传导和价带之间的空间对称性，因此即使楔形的形状不对称，RASHBA效应也会在该系统中抑制。已经发现，通过D'Yakonov-Perel'（DP）机制沿限制的方向定向电子自旋的放松，这是该高迁移率通道中放松的主要过程，在低温下完全被关闭。可以通过在门上施加合适的偏置来打开自旋松弛。利用这种显着效果，已经提出了一种新颖的所有电动自旋透射器。
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric. It has been found that the relaxation of the electron spin oriented along the direction of the confinement via D'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation in this high mobility channel, is entirely switched off at low temperatures. Spin relaxation can be turned on by applying a suitable bias at the gate. Exploiting this remarkable effect, a novel all electrically driven spin-transistor has been proposed.
