论文标题
用氧化离子植入在GE晶片上制造葡萄球菌在GE晶粒中制造，并埋入Geo2层
Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation
论文作者
论文摘要
该论文报告说，通过氧气离子植入未含量的单晶GE晶片的定向（100）通过氧离子植入（100）来制造葡萄干晶片（GEOI）晶片。植入了能量200 keV的氧离子。将植入的晶片快速地进行热退火至650 C。所得的晶圆具有220 nm厚度的顶层晶状体层和埋入的氧化物层（盒）层的高质量晶晶伐金层，厚度约为0.62微米。结晶盒层具有六边形晶体结构，其晶格常数接近标准值。拉曼光谱，带有SAED和EDS的横截面HRTEM确定，在用刻面晶体退火期间将顶部GE层重结晶。顶层的拉伸应力小于+0.4 \％，估计的脱位密度为2.7 x 10^{7} cm^{ - 2}。顶层的厚度，结晶度和电气特性以及Geo_ {2}的框层的质量，可以将其用于设备制造。
The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.
