论文标题
二维GEAS的现场排放
Field emission from two-dimensional GeAs
论文作者
论文摘要
GEAS是IV-V组的分层材料，它正在吸引人们对电子和光电设备中可能应用的关注。在这项研究中，去角质的多层GEAS纳米片在结构上表征并用作后门栅场效应晶体管的通道。结果表明，通过暴露于光或电子束，其栅极调节的P型传导会降低。此外，对田间发射电流的观察表明，GEAS纳米片作为冷阴极作为电子发射的适用性，并在真空电子产品中打开了二维GEAS的新透视应用。野外发射以〜80 v/μm的转交场发生，并且遵循一般的Fowler-Nordheim模型，其电流密度高于10 A/cm^2。
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/μm and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility.
