论文标题
带状结构和终端状态在INAS/GASB CORE-SHELL-SHELL NANOWIRES中
Band structure and end states in InAs/GaSb core-shell-shell nanowires
论文作者
论文摘要
INAS/GASB异质结构中的量子井可以调整为与量子自旋效应相关的拓扑状态,量子旋转霍尔效应是由于倒置带隙和杂交电子和孔状态而产生的。在这里,我们研究了电子孔杂交和量子自旋霍尔在准一维几何形状中的命运,这些几何形状在带有绝缘体核心和INAS和煤气壳的核壳壳纳米线中实现。我们使用$ \ mathbf {k \ cdot p} $理论计算无限长纳米线的频带结构,并在凯恩模型和包膜函数函数近似中计算频带结构,然后将结果映射到用于研究有限长的电线的BHz模型上。显然,量子旋转大厅边缘状态不能出现在缺乏一维边缘的核壳壳纳米线中,但是在倒置的带隙状态下,我们发现有限长的电线代替了电线末端的局部状态。这些终端状态不受拓扑的保护,它们是四倍的堕落,并在沿轴向存在潜在障碍的情况下分为两个Kramers对。然而,只要末端状态完全稳健到(时间反向保存)角度障碍,只要散装带隙不封闭,量子旋转大厅边缘的拓扑保护就存在量子旋转厅边缘状态。
Quantum wells in InAs/GaSb heterostructures can be tuned to a topological regime associated with the quantum spin Hall effect, which arises due to an inverted band gap and hybridized electron and hole states. Here, we investigate electron-hole hybridization and the fate of the quantum spin Hall effect in a quasi one-dimensional geometry, realized in a core-shell-shell nanowire with an insulator core and InAs and GaSb shells. We calculate the band structure for an infinitely long nanowire using $\mathbf{k \cdot p}$ theory within the Kane model and the envelope function approximation, then map the result onto a BHZ model which is used to investigate finite-length wires. Clearly, quantum spin Hall edge states cannot appear in the core-shell-shell nanowires which lack one-dimensional edges, but in the inverted band-gap regime we find that the finite-length wires instead host localized states at the wire ends. These end states are not topologically protected, they are four-fold degenerate and split into two Kramers pairs in the presence of potential disorder along the axial direction. However, there is some remnant of the topological protection of the quantum spin Hall edge states in the sense that the end states are fully robust to (time-reversal preserving) angular disorder, as long as the bulk band gap is not closed.