论文标题
在低温下，带隙和带状尾巴的光学确定$ _2 $ _4 $
Optical Determination of the Band Gap and Band Tail of Epitaxial Ag$_2$ZnSnSe$_4$ at Low Temperature
论文作者
论文摘要
我们报告了BAN GAP E $ _ \ text {g} $的精确确定，以及局部缺陷状态的带尾的特征能量$ u $，对于单晶型Ag $ _2 $ _2 $ znsnse $ _4 $。光致发光激发和时间分辨的光致发光研究都导致e $ _ \ text {g} = 1223 \ pm3 $ meV和$ u = 20 \ pm3 $ mev，在6 K.此处开发的方法的兴趣是通过定量构成态度的填充效果，仅考虑到态度效果效果效果，并将其用于定量效果，并仅考虑态度效果效果。这种方法与最常用于评估局部状态的能量范围的方法不同，即通过测量光致发光发射与激发1之间的能量移位 - 所谓的Stokes变化。目前方法的优点是，必须选择低功率激发的任意选择来选择光致发光发射光谱及其峰值能量。
We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, namely by measuring the energy shift between the photoluminescence emission and the excitation one -- the so-called Stokes shift. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy.
