论文标题
淡淡的室温铁磁性在钒掺杂的能剂钨中脱离了半导体单层
Light-controlled room temperature ferromagnetism in vanadium-doped tungsten diselenide semiconducting monolayers
论文作者
论文摘要
原子上薄的过渡金属二甲化合物(TMD)半导体对现代光电设备和量子计算应用具有巨大的潜力。通过通过引入少量磁性掺杂剂引入这些半导体中的远程铁磁(FM),可以在新兴的Spintronic应用中扩展其潜力。在这里,我们在V型WS2(V-WS2)单层中演示了光介导的室温(RT)FM。我们使用磁性LC共振的原理探测了这种效果,该原理采用了柔软的铁磁CO基于射频(RF)机制的共振的柔软的基于CO的微密封线圈。 LC共振与非凡的巨型磁阻抗效果的组合使线圈对通过其磁芯的磁通量变化高度敏感。然后,我们将V-WS2单层将其放在线圈的核心上,在测量激光器的情况下它会激发其磁性通透性的变化。值得注意的是,发现单层的磁渗透性取决于激光强度,从而证实了这种二维(2D)材料中RT磁性的光控制。在密度功能计算的指导下,我们将这种现象归因于传导和价带中过量孔的存在,以及被困在磁掺杂态中的载体,进而介导了V-WS2单层的磁化。这些发现提供了独特的途径,可以利用低功率的2D Spintronic设备在RT操作的低功率2D Spintronic设备中。
Atomically thin transition metal dichalcogenide (TMD) semiconductors hold enormous potential for modern optoelectronic devices and quantum computing applications. By inducing long-range ferromagnetism (FM) in these semiconductors through the introduction of small amounts of a magnetic dopant, it is possible to extend their potential in emerging spintronic applications. Here, we demonstrate light-mediated, room temperature (RT) FM, in V-doped WS2 (V-WS2) monolayers. We probe this effect using the principle of magnetic LC resonance, which employs a soft ferromagnetic Co-based microwire coil driven near its resonance in the radio frequency (RF) regime. The combination of LC resonance with an extraordinary giant magneto-impedance effect, renders the coil highly sensitive to changes in the magnetic flux through its core. We then place the V-WS2 monolayer at the core of the coil where it is excited with a laser while its change in magnetic permeability is measured. Notably, the magnetic permeability of the monolayer is found to depend on the laser intensity, thus confirming light control of RT magnetism in this two-dimensional (2D) material. Guided by density functional calculations, we attribute this phenomenon to the presence of excess holes in the conduction and valence bands, as well as carriers trapped in the magnetic doping states, which in turn mediates the magnetization of the V-WS2 monolayer. These findings provide a unique route to exploit light-controlled ferromagnetism in low powered 2D spintronic devices capable of operating at RT.