论文标题
备忘录板上的cots mos dosimetry，在轨道上2。5年后结果
COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit
论文作者
论文摘要
我们在备忘录板上使用金属氧化物半导体（MOS）剂量计进行总电离剂量（TID）测量的2。5年后，介绍了结果。备忘录委员会于2014年7月19日在由卫星开发的Bugsat-1“ Tita”微卫星上启动，以留在Leo。我们用作架子氧化物250〜nm的架子（COTS）MOS晶体管的dosimeter p通道商业。在发布之前，从一组100个设备中选择了具有相似排出电流（I-V）曲线的晶体管子集。研究了（I-V）曲线的温度依赖性，以找到最小温度系数偏置点。然后，使用$^{60} $ co伽马源辐照传感器的校准子组，以研究其对TID的反应，显示$ \ sim $ 75〜mV/krad的往事当传感器没有门偏见时，传感器被照射。同样，监测传感器的辐照后响应，以包括对低剂量率照射的校正，产生30〜mV/krad。开发了一个偏置和阅读电路，以允许读取多达4个传感器。在任务的不同时期内，监视了阈值电压。经过2。5年的轨道，安装在备忘录板上的传感器的阈值电压的阈值电压的v $ _ \ mathrm {t} $移位约为35 〜mV，对应于1.2〜krads的剂量。
We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.
