论文标题
接口拓扑绝缘子和铁磁体：BI $ _2 $ te $ _3 $和Fe $ _3 $ o $ $ _4 $异质结构由分子束外交生长
Interfacing topological insulators and ferrimagnets: Bi$_2$Te$_3$ and Fe$_3$O$_4$ heterostructures grown by molecular beam epitaxy
论文作者
论文摘要
依赖于拓扑绝缘子和磁绝缘体异质结构引起的磁性是实现量子异常效应的有前途的途径之一。在这里，我们研究BI $ _2 $ TE $ _3 $和Fe $ _3 $ o $ $ _4 $的异质结构。通过分子束外观蛋白结构的两种不同类型的异质结构，bi $ _2 $ _2 $ _2 $ _4 $ _4 $ _4 $ _2 $ _3 $和bi $ _2 $ _2 $ _3 $ _3 $ _3 $ _3 $ o $ _4 $，我们探索化学稳定性，质量质量，电子结构和运输物业的差异。我们发现fe $ _3 $ o $ $ _4 $上的异质结构bi $ _2 $ _3 $是一种更可行的方法，运输签名与拓扑表面状态的间隙开口一致。
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on Fe$_3$O$_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi$_2$Te$_3$ on Fe$_3$O$_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.
