论文标题
ZnO半导体缺陷与被困的YB离子之间的光子介导的纠缠方案
Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
论文作者
论文摘要
我们提出了一种光学方案，以通过从两个系统中发出的相同光子的两个路径擦除在被困的离子和固态供体量子之间生成纠缠状态。提出的方案利用Zno中的供体绑定激子与$^2p_ {1/2} $之间的相似过渡频率到$^2S_ {1/2} $中的yb $^+$过渡。相关离子状态的寿命比ZnO系统的寿命长6倍，从而导致发射光子的时间分布不匹配。一个失谐的腔体辅助拉曼方案弱地用形状激光脉冲激发了供体，以产生具有0.99时间重叠的光子向yb $^+$排放，并部分将缺陷的排放向yb $^+$ $ transition。剩余的光子移位是通过直流恒定效应完成的。我们表明，使用具有合理参数的弱激发方案可以达到21 kHz和纠缠94％的纠缠率和94％的纠缠率。
We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the $^2P_{1/2}$ to $^2S_{1/2}$ transition in Yb$^+$. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with 0.99 temporal overlap to the Yb$^+$ emission and partially shift the emission of the defect toward the Yb$^+$ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 21 kHz and entanglement fidelity of 94 % can be attained using a weak excitation scheme with reasonable parameters.
