论文标题
对超短SI和GE弯曲晶体中亚GEV电子产生的辐射的研究
Investigation on radiation generated by Sub-GeV electrons in ultrashort Si and Ge bent crystals
论文作者
论文摘要
我们报告了由弯曲硅和Mami（Mainzer Mikrotron）的855 MeV电子产生的γ辐射光谱的测量值。晶体沿梁方向厚15μm，以确保高挠度效率。它们（111）的晶体平面通过压电驱动的机械支架弯曲，该机械支架可以远程改变晶体曲率。以这种方式，可以研究平面通道和体积反射下发出的辐射，这是晶体平面曲率的函数。我们表明，使用体积反射，可以产生强度可比但角度接受度的强烈伽马辐射，而不是通道。我们研究了在晶体曲率的不同值下的辐射强度和角度接受之间的权衡。辐射光谱的测量已在弯橄榄晶晶体中首次进行。特别是，由于原子数较高，GE晶体中的辐射强度高于SI中的辐射强度，这对于基于较高Z变形晶体（例如晶体溶液器）的X射线和伽马射线源的发展很重要。
We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were 15 μm thick along the beam direction to ensure high deflection efficiency. Their (111) crystalline planes were bent by means of a piezo-actuated mechanical holder, which allowed to remotely change the crystal curvature. In such a way it was possible to investigate the radiation emitted under planar channeling and volume reflection as a function of the curvature of the crystalline planes. We show that using volume reflection, one can produce intense gamma radiation with comparable intensity but higher angular acceptance than for channeling. We studied the trade-off between radiation intensity and angular acceptance at different values of the crystal curvature. The measurements of radiation spectra have been carried out for the first time in bent Germanium crystals. In particular, the intensity of radiation in the Ge crystal is higher than in the Si one due to the higher atomic number, which is important for the development of the X-ray and gamma radiation sources based on higher-Z deformed crystals, such as crystalline undulator.
