论文标题

Gigahertz声音调制和频率转移niobate niobate集成平台

Gigahertz acousto-optic modulation and frequency shifting on etchless lithium niobate integrated platform

论文作者

Yu, Zejie, Sun, Xiankai

论文摘要

涉及传播声子的声学相互作用可以打破光的时间和频率调节对称性。但是,由于其较大的结构尺寸,基于大量材料的常规声学调节器的频率带宽限制为数百兆赫。在这里,我们通过使用连续体中的光子结合状态在无蚀刻的Niobate集成平台上进行了实验证明了Gigahertz单层声学调制。通过选择输入和输出通道的特定组合,可以方便地获得光的上层或下侧调制。在此方案下,我们已经意识到了一个3-GHz频率变速子,该频率变速杆在C波段中以〜35 nm的3 dB带宽进行操作。在3-DB操作带宽中,上部(下)侧带调制的光与下部(上)侧面调制的光的灭绝比为44(47)和25(47)和25(23)dB。频率偏移的光可以通过振幅和频率调制进一步处理。因此,所证明的GIGAHERTZ单层声音调制可以实现许多光子应用,例如光信号处理,传感和离子捕获。

Acousto-optic interactions involving propagating phonons can break the time-reversal and frequency-modulation symmetry of light. However, conventional acousto-optic modulators based on bulk materials have frequency bandwidth limited to hundreds of megahertz due to their large structural sizes. Here, we experimentally demonstrate gigahertz single-sideband acousto-optic modulation on an etchless lithium niobate integrated platform by using photonic bound states in the continuum. The upper- or lower-sideband modulation of light can be obtained conveniently by choosing specific combinations of input and output channels. Under this scheme, we have realized a 3-GHz frequency shifter, which operates in the C-band with a 3-dB bandwidth of ~35 nm. The extinction ratios of the upper(lower)-sideband modulated light to the lower(upper)-sideband modulated and unmodulated light are >44 (47) and 25 (23) dB in the 3-dB operating bandwidth. The frequency-shifted light can be further processed with amplitude and frequency modulation. Therefore, the demonstrated gigahertz single-sideband acousto-optic modulation can enable many photonic applications such as optical signal processing, sensing, and ion trapping.

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