论文标题
质子照射后对NDL原型LGAD传感器的辐射影响
Radiation effects on NDL prototype LGAD sensors after proton irradiation
论文作者
论文摘要
我们研究了由高能量物理学研究所（IHEP）开发的低增益雪崩检测器（LGAD）传感器和中国北京师范大学的新型设备实验室（NDL）的辐射效应。这些新传感器已在中国原子能研究所（CIAE）使用100 MEV质子束在中国原子能研究所（CIAE）进行了辐照，该底梁具有五个不同的流量，从7 $ \ times10^{14} $ $ $ n_ {eq}/cm^2 $最高4.5 $ \ times10^{15} {15} $ n_ $ n_ $ n_ {eq} {eq}/cm^2 $^2 $^2 $^2 $。结果表明，随着受体去除机制的预期，增益层中有效的掺杂浓度随着辐射通量的增加而降低。通过比较数据和模型，可以使受体删除系数$ c_ {a} $ = $ = $（6.07 \ pm0.70）\ times10^{ - 16} 〜cm^2 $，这表明NDL传感器具有相当好的辐射电阻。
We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$\times10^{14}$ $n_{eq}/cm^2$ up to 4.5$\times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07\pm0.70)\times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.
