论文标题
逆Edelstein效应对SMB $ _6 $表面的电气检测
Electrical detection of the inverse Edelstein effect on the surface of SmB$_6$
论文作者
论文摘要
我们报告了自旋电流诱导的电荷积累，逆埃德尔斯坦效应（IEE）在候选拓扑肿瘤绝缘子SMB6单晶表面上的测量。 SMB6的强大表面传导通道已显示出大量的自旋摩托锁定，并且通过外部铁磁接触的自旋极化电流可引起SMB6表面上的自旋依赖电荷积累。 IEE信号对偏置电流的依赖性，外部磁场方向和温度与动量空间中SMB6中表面带的逆时针旋转纹理一致，并且与正常的Edelstein信号相比，效应的方向和大小由Onsagager互惠关系清楚地解释。此外，我们估计旋转到电荷转换效率，IEE长度为4.46 nm，比其他典型的RashBA接口中的效率大的数量级，这意味着Rashba对IEE信号的贡献可能很小。在此材料上的现有报告和旋转传导性质的现有报告的基础上，我们的结果提供了其他证据，表明SMB6的表面支持旋转极化传导通道。
We report the measurement of spin current induced charge accumulation, the inverse Edelstein effect (IEE), on the surface of a candidate topological Kondo insulator SmB6 single crystal. Robust surface conduction channel of SmB6 has been shown to exhibit large degree of spin-momentum locking, and spin polarized current through an external ferromagnetic contact induces the spin dependent charge accumulation on the surface of SmB6. The dependences of the IEE signal on the bias current, an external magnetic field direction and temperature are consistent with the anticlockwise spin texture for the surface band in SmB6 in the momentum space, and the direction and magnitude of the effect compared with the normal Edelstein signal are clearly explained by the Onsager reciprocal relation. Furthermore, we estimate spin-to-charge conversion efficiency, the IEE length, as 4.46 nm that is an order of magnitude larger than the efficiency found in other typical Rashba interfaces, implying that the Rashba contribution to the IEE signal could be small. Building upon existing reports on the surface charge and spin conduction nature on this material, our results provide additional evidence that the surface of SmB6 supports spin polarized conduction channel.
