论文标题
铁电偏振可逆的界面晶体大厅效应
Interfacial crystal Hall effect reversible by ferroelectric polarization
论文作者
论文摘要
通过电压控制自旋依赖性性能,不涉及磁化切换,对于低功率旋转型具有显着优势。在这里,我们预测界面晶体大厅效应(ICHE)可以为此目的服务。我们表明,由于界面处的对称性降低而导致由补偿的抗铁磁金属和非磁绝缘体组成的异质结构中可以发生ICHE,如果在两个相同的小铁电层之间对称性地分层,则可以使抗fiferromagnet对称地分层。我们使用三个材料系统的密度功能理论计算明确说明了这种现象:mnbi $ _ {2} $ te $ _ {4} $/gei $ _ {2} $和拓扑在$ _ {2}中我们表明,这三个系统都揭示了相当大的裂料,而后两个系统分别表现出量子元素和iChe,它们在铁电偏振上可逆。我们的提案为电压控制的旋转型机构打开了一个替代方向,并尚未通过异质结构设计探索功能设备的可能性。
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional theory calculations for three material systems: MnBi$_{2}$Te$_{4}$/GeI$_{2}$ and topological In$_{2}$Te$_{3}$/MnBi$_{2}$Te$_{4}$/In$_{2}$Te$_{3}$ van der Waals heterostructures, and GeTe/Ru$_{2}$MnGe/GeTe heterostructure composed of three-dimensional materials. We show that all three systems reveal a sizable ICHE, while the latter two exhibit a quantum ICHE and ICHE, respectively, reversible with ferroelectric polarization. Our proposal opens an alternative direction for voltage controlled spintronics and offers not yet explored possibilities for functional devices by heterostructure design.