论文标题
单层MOS2中的局部光载
Local photodoping in monolayer MoS2
论文作者
论文摘要
通过激光暴露诱导2D材料诱导静电掺杂（光培养效果）是通向光电现象的令人兴奋的途径。但是，缺乏关于光电播放器在光电设备中的尊重的作用的研究。在这里，我们采用扫描光电流显微镜（SPCM）技术来研究永久光载体如何调节MOS2晶体管中的光电流产生。我们声称光载量填充了MOS2传导带中的电子状态，从而防止了MOS2板的光子吸收和光电流产生。此外，通过比较在不同底物上的持续光电流（PPC）生成的MOS2，我们阐明了用于栅极和绝缘体（栅极构造器界面）之间的界面对于光电培训生成至关重要。我们的工作使人们对MOS2晶体管中的光电载效应以及在集成设备中的实施实现迈出了一步。
Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in optoelectronic devices is local. Here, we employ scanning photocurrent microscopy (SPCM) techniques to investigate how a permanent photodoping modulates the photocurrent generation in MoS2 transistors locally. We claim that the photodoping fills the electronic states in MoS2 conduction band, preventing the photon-absorption and the photocurrent generation by the MoS2 sheet. Moreover, by comparing the persistent photocurrent (PPC) generation of MoS2 on top of different substrates, we elucidate that the interface between the material used for the gate and the insulator (gate-insulator interface) is essential for the photodoping generation. Our work gives a step forward to the understanding of the photodoping effect in MoS2 transistors and the implementation of such an effect in integrated devices.
