论文标题
在有缺陷的SM和ND共掺杂陶瓷中增强了机电响应
Enhanced Electromechanical Response in Defective Sm and Nd Co-doped Ceria
论文作者
论文摘要
高氧氧化葡萄岩，例如GD掺杂的陶瓷是一种可持续的非经典电纵横制剂，具有机电特性，其优于铅基压电金属氧化物。在这里，我们报告了具有名义上较低短距离空位术能量的共掺杂陶瓷（SM，ND）中的电践图。这种策略在低频时会导致较高的电静止应变系数，以及意外的机电应变饱和度和弛豫效应。这些结果支持这样的假设，即电践图受到氧气空位的局部环境以及离子迁移阻断因子的强烈影响。
Highly oxygen defective cerium oxide, e.g. Gd-doped ceria is a sustainable non-classical electrostrictor with electromechanical properties that are superior to lead-based piezoelectric metal oxides. Here, we report electrostriction in co-doped ceria (Sm, Nd) with a nominally low short-range vacancy-dopant association energy. Such a strategy results in a higher electrostrictive strain coefficient at lower-frequencies, and unexpected electromechanical strain saturation and relaxation effects. These outcomes support the hypothesis that electrostriction is strongly influenced by the local environment of oxygen vacancy and by the ionic migration blocking factors built-in the microstructure.
