论文标题
P-Diamond，SI，Gan和Ingaas Terafets
p-Diamond, Si, GaN and InGaAs TeraFETs
论文作者
论文摘要
P-Diamond场效应晶体管（FET）具有较大的有效质量，较长的动量松弛时间和高载体迁移率是血浆Terahertz（THZ）应用的出色候选者。先前的研究表明，P-Diamond等离子THZ FET（Terafets）可以在200 GHz至〜600 GHz的低频窗口下以等离激元谐振模式运行，从而显示出超出5G Sub-Thz应用的有希望的潜力。在这项工作中，我们探讨了P-Diamond晶体管比N-Diamond，Si，Gan和Ingaas Terafets的优势，并估算了谐振等离子所需的最小迁移率。我们的数值模拟表明，P-Diamond Terafet具有相对较低的最小谐振迁移率，因此可以实现共振检测。钻石响应特征可以通过变化的工作温度来调节。温度从300 K到77 K的降低可改善Terafets的检测性能。在室温和77 K时，P-Diamond Terafet在较大的动态范围内呈现出很高的检测灵敏度。当通道长度降低到20 nm时，P-Diamond Terafet在大频率窗口中所有类型的Terafets中的直流响应最高。
p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonant mode at a low frequency window of 200 GHz to ~600 GHz, thus showing promising potential for beyond 5G sub-THz applications. In this work, we explore the advantages of p-diamond transistors over n-diamond, Si, GaN and InGaAs TeraFETs and estimate the minimum mobility required for the resonant plasmons. Our numerical simulation shows that the p-diamond TeraFET has a relatively low minimum resonant mobility, and thus could enable resonant detection. The diamond response characteristics can be adjusted by changing operating temperature. A decrease of temperature from 300 K to 77 K improves the detection performance of TeraFETs. At both room temperature and 77 K, the p-diamond TeraFET presents a high detection sensitivity in a large dynamic range. When the channel length is reduced to 20 nm, the p-diamond TeraFET exhibits the highest DC response among all types of TeraFETs in a large frequency window.
