论文标题

温度引起的LIFSHITZ过渡和ZRSISE中可能的兴奋性不稳定性

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe

论文作者

Chen, F. C., Fei, Y., Li, S. J., Wang, Q., Luo, X., Yan, J., Lu, W. J., Tong, P., Song, W. H., Zhu, X. B., Zhang, L., Zhou, H. B., Zheng, F. W., Zhang, P., Lichtenstein, A. L., Katsnelson, M. I., Yin, Y., Hao, Ning, Sun, Y. P.

论文摘要

由于诸如Fermi能量接近节点的独特电子结构,如线性分散体和状态的消失密度,节点线半学已经引起了极大的兴趣。在这里,我们报告了在节点线半含量ZRSISE上的温度依赖性传输和扫描隧穿显微镜(Speproscopicy)(STM [S])测量。您的实验结果和理论分析一致地表明,温度会在ZRSISE中诱导80和106 k的LIFSHITINE诱导LIFSHITIS的过渡,从而在ZRSISE中进行了相同的运输阶段,这是在pysisies condymaties condysalies的。更引人注目的是,我们观察到在低温下从STS光谱的费米能量周围的V形浸入结构,这可以归因于自旋轨道耦合和激发型不稳定性的共同效应。我们的观察结果表明,相关相互作用可能在ZRSISE中起重要作用,该ZRSIS具有准二维电子结构。

The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.

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