论文标题
具有旋转$ s = 1 $和任意相互作用范围的铁磁模型模型的配对近似方法。磁性半导体Crias的应用
The Pair Approximation method for the ferromagnetic Heisenberg model with spin $S=1$ and arbitrary range of interactions. Application for the magnetic semiconductor CrIAs
论文作者
论文摘要
对各向同性铁磁Heisenberg模型的近似方法已经制定了$ s = 1 $的模型。已考虑了任意范围的交换相互作用。已经考虑了单离子各向异性以及外部磁场。在该方法中，吉布斯（Gibbs）的自由能是从中得出的，所有热力学特性都可以自吻。为了说明已发达的形式主义，已经对Crias Planar Magement Magiconductor进行了数值计算，这是一种假设的材料，其存在最近通过基于密度功能理论的计算来预测。对于此模型材料，已经研究了所有相关的热力学磁性特性。数值结果已在数字中提出并进行了讨论。
The Pair Approximation method has been formulated for the isotropic ferromagnetic Heisenberg model with spin $S=1$. The exchange interactions of arbitrary range have been taken into account. The single-ion anisotropy has been considered as well as the external magnetic field. Within the method, the Gibbs free-energy has been derived, from which all thermodynamic properties can be self-consistently obtained. In order to illustrate the developed formalism, the numerical calculations have been performed for CrIAs planar magnetic semiconductor, a hypothetical material whose existence has been recently predicted by the Density Functional Theory-based calculations. For this model material, all the relevant thermodynamic magnetic properties have been studied. The numerical results have been presented in the figures and discussed.
