论文标题
由离子植入钻石产生的单个氮呈中心的自旋相干性和深度通过筛选面膜
Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks
论文作者
论文摘要
我们表征了由10盎司n+离子植入钻石中通过薄SIO $ _2 $层植入钻石中的单氮散布（NV）中心，可作为筛选口罩。尽管与用于创建近表面NV中心的标准能量相比相对较高的加速能量（<5 keV），但筛选掩盖会修改n $^+$ $ $ $离子的分布，该分布在钻石表面达到峰值[ITO等，Appl。物理。 Lett。 110，213105（2017）]。我们检查了NV电子自旋的相干时间及其深度之间的关系，表明很大一部分NV中心位于距表面10 nm之内，与蒙特卡洛模拟一致。通过噪声光谱，表面形貌和X射线光电子光谱法评估表面对NV自旋相干时间的影响。
We characterize single nitrogen-vacancy (NV) centers created by 10-keV N+ ion implantation into diamond via thin SiO$_2$ layers working as screening masks. Despite the relatively high acceleration energy compared with standard ones (< 5 keV) used to create near-surface NV centers, the screening masks modify the distribution of N$^+$ ions to be peaked at the diamond surface [Ito et al., Appl. Phys. Lett. 110, 213105 (2017)]. We examine the relation between coherence times of the NV electronic spins and their depths, demonstrating that a large portion of NV centers are located within 10 nm from the surface, consistent with Monte Carlo simulations. The effect of the surface on the NV spin coherence time is evaluated through noise spectroscopy, surface topography, and X-ray photoelectron spectroscopy.
