论文标题
在外部HF0.5ZR0.5ZR0.5O2隧道连接中，揭开铁电偏振和离子贡献
Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions
论文作者
论文摘要
基于铁电HF0.5ZR0.5O2（HZO）的隧道设备对新兴数据存储和计算技术有很大的承诺。设备的电阻状态可以通过合适的写作电压更改。然而，导致电阻变化的微观机制是铁电控制屏障特性和与缺陷相关的运输机制之间的复杂相互作用。此处显示，HZO膜的微观结构的基本作用在这些贡献之间建立了平衡。氧化物膜呈现出连贯或不连贯的晶界，与HZO膜中单斜骨和正骨相的存在相关，这是由与外部生长的底物的不匹配所决定的。这些晶界是允许在仅存在正骨相或不可逆的（1000-100000％）的不可逆相位时，可以获得大型（最高450％）和完全可逆的真正极化电气固定的拨动。
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist.
