论文标题
单个量子点和L4/3光子晶体纳米腔之间的强耦合
Strong coupling between a single quantum dot and an L4/3 photonic crystal nanocavity
论文作者
论文摘要
我们证明了单个量子点与基于GAAS的L4/3型光子晶体纳米腔之间的强耦合。 L4/3腔支持高理论Q因子（〜8 {\ times} 10^6），较小的模式体积（〜0.32（λ/n）^3）和一个电场分布，具有最大电场的电场分布，位于宿主介电材料中，这促进了与量子点的强耦合。我们制造了L4/3腔，并使用光致发光测量值观察到高度超过80,000。我们通过观察光谱中的清晰的抗跨跨跨跨量，确认了单个量子点和L4/3腔之间的强耦合，Q系数为33,000。
We demonstrate strong coupling between a single quantum dot and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (~8{\times}10^6), a small mode volume (~0.32 (λ/n)^3), and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a quantum dot. We fabricated L4/3 cavities and observed a high Q factor over 80,000 using photoluminescence measurement. We confirmed strong coupling between a single quantum dot and an L4/3 cavity with a Q factor of 33,000 by observing a clear anti-crossing in the spectra.
