论文标题
使用Intpix4-SOI像素化硅设备开发中子成像传感器
Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices
论文作者
论文摘要
我们已经开发了一种基于Intpix4-SOI像素化硅设备的中子成像传感器。中子辐照测试是在几个中子设施中进行的，以研究传感器对中子的反应。对于热中子的检测效率约为$ 1.5 $ \％。空间分辨率的上限评估为$ 4.1 \ pm 0.2〜μ $ m，就线路传播函数的标准偏差而言。
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~μ$m in terms of a standard deviation of the line spread function.
