论文标题
垂直磁性隧道连接的自旋转移转换切换
Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions
论文作者
论文摘要
我们分析了垂直磁化隧道连接中磁化磁化强度转换的反跳的现象。该分析基于脉冲诱导的后跳动的一次性时间分辨电导测量值。研究几种材料变体表明，后跳是名义上固定系统的特征。发现后跳动是通过两个顺序的切换事件进行的，这些切换事件导致最终的电导态P'接近（但与传统平行状态）的差异。 p'状态不存在。如果移除电流，通常会放松传统的反平行状态。 P'状态涉及固定层的唯一自旋偏振部分的切换。文献的分析表明，仅当自旋偏振层与固定系统的其余部分相结合时，才会发生后跃波，这证明后验是合理的，而后验依据是在旋转转移 - 转速磁性磁性随机访问记忆中经过经验实现的后跳动的缓解策略。
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hopping. Studying several material variants reveals that the back-hopping is a feature of the nominally fixed system of the tunnel junction. The back-hopping is found to proceed by two sequential switching events that lead to a final state P' of conductance close to --but distinct from-- that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back-hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back-hopping that were implemented empirically in spin-transfer-torque magnetic random access memories.
